Papers published within the ELICISR project

Peer-reviewed journals:

• S. Ilić, A. Jevtić, S. Stanković, G. Ristić, Floating-gate MOS transistor with dynamic biasing as a radiation sensor, Sensors, 20 (11), 3329, 2020 (Impact factor: IF= 3.031); https://doi.org/10.3390/s20113329 (OPEN ACCESS)


• Goran S. Ristic, Marko S. Andjelković, Russell Duane, Alberto J. Palma, Aleksandar B. Jakšić, Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm, Sensors and Materials, 33 (6), 2109–2116, 2021 (IF = 0.759); https://doi.org/10.18494/SAM.2021.3425 (OPEN ACCESS)


• Goran S. Ristic, Stefan D. Ilic, Russell Duane, Marko S. Andjelkovic, Alberto J. Palma, Antonio M. Lallena, Milos D. Krstic, Srboljub J. Stankovic, Aleksandar B. Jaksic, Radiation sensitive MOSFETs irradiated with various positive gate biases, Journal of Radiation Research and Applied Sciences, 14 (1), 353-357, 2021 (IF = 1.770); https://doi.org/10.1080/16878507.2021.1970921 (OPEN ACCESS)
  


• Stefan D. Ilić, Marko S. Andjelković, Russell Duane, Alberto J. Palma, Milija Sarajlić, Srboljub Stanković, Goran S. Ristić, Recharging process of commercial floating-gate MOS transistor in dosimetry application, Microelectronics Reliability, 126, 114322, 2021 (IF = 1.589); https://doi.org/10.1016/j.microrel.2021.114322 (OPEN ACCESS)
  


• Goran S. Ristic, Stefan D. Ilic, Marko S. Andjelkovic, Russell Duane, Alberto J. Palma, Antonio M. Lalena, Milos D. Krstic, Aleksandar B. Jaksic, Sensitivity and fading of irradiated RADFETs with different gate voltages, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1029, 166473, 2022 (IF = 1.455); https://doi.org/10.1016/j.nima.2022.166473 (OPEN ACCESS)
  


• Marko Andjelkovic, Aleksandar Simevski, Junchao Chen, Oliver Schrape, Zoran Stamenkovic, Miloš Krstic, Stefan Ilić, Goran Ristić, Aleksandar Jaksic, Nikola Vasovic, Russell Duane, Alberto J. Palma, Antonio M. Lallena, Miguel A. Carvajal Rodríguez, A Design Concept for Radiation Hardened RADFET Readout System for Space Applications, Microprocessors and Microsystems, 104486, 2022 (IF = 1.525); https://doi.org/10.1016/j.micpro.2022.104486 (OPEN ACCESS)
  


• Goran S. Ristić, Stefan D. Ilić, Sandra Veljković, Aleksandar S. Jevtić, Strahinja Dimitrijević, Alberto J. Palma, Srboljub Stanković, Marko S. Andjelković, Commercial P-Channel Power VDMOSFET as X-ray Dosimeter, Electronics, 11(6), 918, 2022; https://doi.org/10.3390/electronics11060918 (IF = 2.397); (OPEN ACCESS)
  


• Goran S. Ristić, Marko S. Andjelković, Russell Duane, Aleksandar B. Jakšić, Fading of pMOS dosimeters over a long period of time, Micro Nano Lett., 1–4, 2022; http://doi.org/10.1049/mna2.12119 (IF = 1.102); (OPEN ACCESS)
  

Peer-reviewed international conferences:

• Marko Andjelkovic, Aleksandar Simevski, Junchao Chen, Oliver Schrape, Zoran Stamenkovic, Milos Krstic, Stefan Ilic, Luka Spahic, Laza Kostic, Goran Ristic, Aleksandar Jaksic, Alberto J. Palma, Antonio Lallena, Miguel Angel Carvaja, "Design of Radiation Hardened RADFET Readout System for Space Applications," 2020 23rd Euromicro Conference on Digital System Design (DSD), Kranj, Slovenia, 2020, pp. 484-488;
  Link Paper


• Isidoro Ruiz-García, Pablo Escobedo, Juan Román-Raya, Stefan Illić, Damian Guirado, Alberto José Palma, Miguel Ángel Carvajal, Temperature compensation in dose-rate measurements based on commercial photodiodes using a modified reader unit, 9th Int. Conf. Radiation in Various Fields of Research (RAD 2021), Herceg Novi, Montenegro, June 14-18, 2021, p. 164; https://doi.org/10.21175/rad.abstr.book.2021.26.9
  Link


• L. Spahić, S. Ilić, M. Anđelković, A. J. Palma, and G. S. Ristić, Application of Transimpedance Amplifiers in PIN Photodiode Dosimetry, in Proc. 32nd International Conference on Microelectronics, Nis, Serbia, September 12-14, 2021, pp. 317-320
  Link Paper


• S. D. Ilić, M. S. Andjelković, M. A. Carvajal, A. M. Lallena, M. Krstić, S. Stanković, G. S. Ristić, Power Silicon Carbide Schottky Diodes as Current Mode γ-Radiation Detectors, in Proc. 32nd International Conference on Microelectronics, Nis, Serbia, September 12-14, 2021, pp. 337-340
  Link Paper


• G. S. Ristić, A. S. Jevtić, S. D. Ilić, S. Dimitrijević, S. Veljković, A. J. Palma, S. Stanković, and M. S. Andjelković, Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation, in Proc. 32nd International Conference on Microelectronics, Nis, Serbia, September 12-14, 2021, pp. 341-344
  Link Paper